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| savantic semiconductor product specification silicon npn power transistors S2055AF d escription with to-3p(h)is package high voltage ;high speed built-in damper diode applications horizontal deflection for color tv pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (t c =25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 15 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 2.5 /w fig.1 simplified outline (to-3p(h)is) and symbol
savantic semiconductor product specification 2 silicon npn power transistors S2055AF characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 700 v v ce (sat) collector-emitter saturation voltage i c =4.5a ;i b =2.0a 1.0 v v be (sat) base-emitter saturation voltage i c =4.5a ;i b =2.0a 1.3 v i ces collector cut-off current v ce =1500v; v be =0 t c =125 1 2 ma i ebo emitter cut-off current v eb =5v; i c =0 300 ma h fe dc current gain i c =1a ; v ce =5v 8 f t transition frequency i c =0.1a ; v ce =5v;f=5mhz 7 mhz switching times inductive load t s storage time 7 s t f fall time i c =4.5a ; h fe =2.5; v cc =140v l c =0.9mh; l b =3h 0.55 s savantic semiconductor product specification 3 silicon npn power transistors S2055AF package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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